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PDF IRF6616TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6616TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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l RoHS compliant containing no lead or bormide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l Lead-Free
PD - 96100
IRF6616PbF
IRF6616TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
29nC 9.4nC 2.4nC 33nC 15nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
MP
DirectFET ISOMETRIC
Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
40
±20
19
15
106
150
36
15
Units
V
A
mJ
A
12
10 ID = 19A
8.0 TJ = 125°C
6.0
4.0
2.0
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
5 ID= 15A VDS = 32V
4 VDS= 20V
3
2
1
0
0 10 20 30
QG Total Gate Charge (nC)
40
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS =15A.
1
05/23/07
Free Datasheet http://www.Datasheet4U.com
1 page  
1000.00
100.00
10.00
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.00
VGS = 0V
0.10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
200
160
120
IRF6616PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10 100µsec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
01
1msec
10msec
10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 3.7A
4.3A
BOTTOM 15A
80
40
www.irf.com
0
25 50 75 100 125 150
Starting T J, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
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| PDF Descargar | [ Datasheet IRF6616TRPBF.PDF ] | |
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