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PDF DMN3300U Data sheet ( Hoja de datos )
| Número de pieza | DMN3300U | |
| Descripción | N-CHANNEL FIELD EFFECT TRANSISTOR ( 30V, 2A ) | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN3300U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• 150 mΩ @VGS = 4.5V
• 200 mΩ @VGS = 2.5V
• 240 mΩ @VGS = 1.8V
• 300 mΩ @VGS = 1.5V
• Ultra Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
D
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Characteristic
GS
TOP VIEW
Internal Schematic
Symbol
VDSS
VGSS
ID
IDM
Value
30
±12
2.0
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 30 37 ⎯
V VGS = 0V, ID = 100μA
IDSS
⎯ ⎯ 1 μA VDS = 30V, VGS = 0V
IGSS
⎯ ⎯ ±10 μA VGS = ±12V, VDS = 0V
VGS(th) 0.5 ⎯ 1 V VDS = VGS, ID = 250μA
100 150
VGS = 4.5V, ID = 4.5A
RDS (ON)
⎯
140
185
200
250
mΩ VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 1.5A
240 300
VGS = 1.5V, ID = 0.5A
|Yfs| ⎯ 5 ⎯ S VDS =5V, ID = 2.4A
VSD ⎯ 0.8 1.1 V VGS = 0V, I = 0.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
⎯ 193 ⎯
⎯ 35 ⎯
⎯ 23 ⎯
⎯7⎯
⎯ 24 ⎯
⎯ 24 ⎯
⎯ 12 ⎯
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
ns VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DMN3300U
Document number: DS31181 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
Free Datasheet http://www.Datasheet4U.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DMN3300U.PDF ] | |
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