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PDF K3572 Data sheet ( Hoja de datos )
| Número de pieza | K3572 | |
| Descripción | MOSFET ( Transistor ) - 2SK3572 | |
| Fabricantes | NEC Electronics | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3572
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3572 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A)
• Built-in gate protection diode
• Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3572
2SK3572-S
2SK3572-ZK
2SK3572-Z
TO-220AB
TO-262
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
Tstg
20
±20
±80
±300
1.5
52
150
–55 to +150
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16258EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2002
Free Datasheet http://www.Datasheet4U.com
1 page  
2SK3572
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
ID = 40 A
12 Pulsed
10
VGS = 4.5 V
8
6
4 10 V
2
0
-50
0 50 100
Tch - Channel Temperature - °C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
C iss
C oss
C rss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
VDD = 10 V
VGS = 10 V
RG = 10 Ω
tf
tr
td(on)
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
VDD = 16 V
10 V
16
10
8
12
VGS
6
84
42
VDS ID = 83 A
00
0 10 20 30 40
QG - Gate Charge - nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS = 10 V
10
0V
1
0.1
0.01
0
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1 10
ID - Drain Current - A
100
Data Sheet D16258EJ2V0DS
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3572.PDF ] | |
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