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PDF IRGP4263PBF Data sheet ( Hoja de datos )

Número de pieza IRGP4263PBF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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No Preview Available ! IRGP4263PBF Hoja de datos, Descripción, Manual

  IRGP4263PbF
IRGP4263-EPbF
VCES = 650V
IC = 60A, TC =100°C
Insulated Gate Bipolar Transistor
 C
G
G 
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
E
C
G
IRGP4263PbF 
C
Collector
E
C
G
 IRGP4263EPbF 
E
Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5µs short circuit SOA
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRG7P4263PbF
IRG7P4263-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4263PbF
IRGP4263-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current, VGE=20V
ILM Clamped Inductive Load Current, VGE=20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
192
192
±20
300
150
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1 www.irf.com © 2013 International Rectifier
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.5
–––
–––
Units
°C/W
July 12, 2013
Free Datasheet http://www.Datasheet4U.com

1 page




IRGP4263PBF pdf
   IRGP4263PbF/IRGP4263-EPbF
200
180
160
TJ = 25°C
TJ = 175°C
140
120
100
80
60
40
20
0
4 6 8 10 12 14 16 18
VGE, Gate-to-Emitter Voltage(V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
20
10
9
8
7 EON
6
5
4
3
2 EOFF
1
0
0 10 20 30 40 50 60 70 80 90 100 110
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 0.210mH; VCE = 400V, RG = 10; VGE = 15V
1000
8
7
tdOFF
6
EON
5
100 tF
tdON
tR
4
3
EOFF
2
1
10
0
10 20 30 40 50 60 70 80 90 100
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 0.210mH; VCE = 400V, RG = 10; VGE = 15V
10000
0
0 20 40 60 80 100 120
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 0.210mH; VCE = 400V, ICE = 48A; VGE = 15V
35 280
1000
100
10
tdOFF
tF
tdON
tR
30 Tsc
25
Isc
20
15
10
240
200
160
120
80
1
0 20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 0.210mH; VCE = 400V, ICE = 48A; VGE = 15V
5 www.irf.com © 2013 International Rectifier
5 40
8 10 12 14 16 18
VGE (V)
Fig. 17 - VCE vs. Short Circuit Time
Vcc= 400V; TC= 150°C
July 12, 2013
Free Datasheet http://www.Datasheet4U.com

5 Page





IRGP4263PBF arduino
  IRGP4263PbF/IRGP4263-EPbF
Qualification Information
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial
(per JEDEC JESD47F) ††
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
11 www.irf.com
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
© 2013 International Rectifier
July 12, 2013
Free Datasheet http://www.Datasheet4U.com

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