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PDF IRG7RC10FDPBF Data sheet ( Hoja de datos )

Número de pieza IRG7RC10FDPBF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier　
Logotipo International Rectifier Logotipo



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No Preview Available ! IRG7RC10FDPBF Hoja de datos, Descripción, Manual

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE(on)
• Zero VCE(on) temperature coefficient
• 3µs Short Circuit Capability
• Ultra Fast Soft Recovery Co-pak Diode
• Square RBSOA
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
Applications
• Air Conditioner Compressor
• Refrigerator
• Vacuum Cleaner
• Low Frequency Inverter
PD - 97759
IRG7RC10FDPbF
C
G
E
n-channel
VCES = 600V
IC = 9.0A, TC = 100°C
tsc > 3μs, Tjmax = 150°C
VCE(on) typ. = 1.6V
@ IC = 5A
C
E
G
D-Pak
IRG7RC10FDPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
IFM
VGE
PD @ TC =25°C
PD @ TC =100°C
TJ
Diode Continuous Forward Current
dDiode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RJC
RJC
RJA
Parameter
eJunction-to-Case - IGBT
eJunction-to-Case - Diode
fJunction-to-Ambient (PCB Mount Steady State)
1
Max.
600
16.5
9.0
20
20
16.5
9.0
20
± 30
61
24
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Min.
—
—
—
Typ.
—
—
—
Max.
2.1
6.1
50
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
02/01/12
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IRG7RC10FDPBF pdf
IRG7RC10FDPbF
20 20
15 15
10
ICE = 2.5A
ICE = 5.0A
ICE = 10A
5
0
5
600
10 15
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
20
500
400
EOFF
300
200 EON
100
0
0 2 4 6 8 10
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1.6mH; VCE = 400V, RG = 100; VGE = 15V.
360
340
320 EOFF
300
280
EON
260
240
220
200
20 40 60 80 100 120 140 160
Fig. 16 - Typ. REGne(rg)y Loss vs. RG
TJ = 150°C; L = 1.6mH; VCE = 400V, ICE = 5.0A; VGE = 15V
www.irf.com
10
TJ = 150°C
5
TJ = 25°C
0
4 5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20μs
1000
tF
100
tdON
tdOFF
10
tR
1
0 2 4 6 8 10
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.6mH; VCE= 400V
RG= 100; VGE= 15V
1000
tF
100 tdOFF
tdON
10
tR
1
0 20 40 60 80 100 120 140 160
RG ()
Fig. 17- Typ. Switching Time vs. RG
TJ = 150°C; L=1.6mH; VCE= 400V
ICE= 5.0A; VGE= 15V
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IRG7RC10FDPBF arduino
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
IRG7RC10FDPbF
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS:101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
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