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PDF IRG7RA13UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7RA13UPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
IRG7RA13UPbF
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
Description
This IGBT is specifically designed for applications in
Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low
EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction
temperature and high repetitive peak current capability.
These features combine to make this IGBT a highly
efficient, robust and reliable device for PDP applications.
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
360
1.42
276
150
C
C
V
V
A
°C
G
E
n-channel
G
Gate
C
Collector
E
G
D-Pak
E
Emitter
Ordering Information
Base part number
IRG7RA13UPbF
Package Type
D-Pak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part Number
IRG7RA13UPbF
IRG7RA13UTRPbF
IRG7RA13UTRLPbF
IRG7RA13UTRRPbF
Absolute Maximum Ratings
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Parameter
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
Max.
±30
40
20
276
78
31
0.63
-40 to + 150
300
Typ.
–––
—
Max.
1.6
50
Units
V
A
W
W/°C
°C
Units
°C/W
1 www.irf.com © 2012 International Rectifier
November 5th, 2012
Free Datasheet http://www.Datasheet4U.com
1 page  
10000
1000
Cies
100
Coes
10
0
Cres
100
VCE (V)
Fig 13. Typical Capacitance vs.
Collector-to-Emitter Voltage
10
200
IRG7RA13UPbF
20
ID= 12A
16 VDS= 240V
VDS= 150V
12 VDS= 60V
8
4
0
0 10 20 30 40
QG Total Gate Charge (nC)
Fig 14. Typical Gate Charge
vs. Gate-to-Emitter Voltage
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
Ri(°C/W) i (sec)
R 1R 1
R 2R 2
R 3R 3
R 4R 4
0.018744 0.000006
J J
1 1
CC 0.575445 0.000170
2 2
3 3
4 4
0.687910 0.001311
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
Ci= iRi
0.314901 0.006923
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 www.irf.com © 2012 International Rectifier
November 5th, 2012
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG7RA13UPBF.PDF ] | |
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