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PDF IRG7PH50K10DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH50K10DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
VCES = 1200V
IC = 50A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 35A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
G
G
G
E
n-channel
G
Gate
E
C
G
IRG7PH50K10DPbF
C
Collector
E
C
G
IRG7PH50K10D‐EPbF
E
Emitter
Benefits
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
90
50
160
160
20
10
±30
400
160
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
1 www.irf.com © 2012 International Rectifier
Max.
0.3
1.4
–––
–––
Units
°C/W
January 09, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
8
ICE = 18A
ICE = 35A
6 ICE = 70A
4
2
0
6 8 10 12 14 16 18 20
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
10
8
160
140
120
100
80
60
40
20
0
4
TJ = 25°C
TJ = 150°C
6 8 10 12 14
VGE, Gate-to-Emitter Voltage(V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
6
EON
4
EOFF
2
tF
100 tdON
tR
0
0 10 20 30 40 50 60 70 80
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
10
8
EON
6
4 EOFF
10
0
10 20 30 40 50 60 70
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
10000
1000
100
tdOFF
tdON
tF tR
2
0
0 20 40 60 80 100 120
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
5 www.irf.com © 2012 International Rectifier
10
1
0 20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
January 09, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page 
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AD Part Marking Information
EXAM PLE:
TH IS IS A N IR G P 3 0 B 1 2 0 K D -E
W ITH A S S E M B L Y
LOT CODE 5657
ASSEM BLED ON WW 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
IN TE R N A TIO N A L
R E C TIF IE R
LO G O
ASSEM BLY
LO T CO DE
035H
56 57
PART NUM BER
D ATE CO DE
YEAR 0 = 2000
WEEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2012 International Rectifier
January 09, 2013
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRG7PH50K10DPBF.PDF ] | |
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