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PDF IRG7PH35UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH35UPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 97479
IRG7PH35UPbF
IRG7PH35U-EP
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
C
G
E
n-channel
C
VCES = 1200V
I NOMINAL = 20A
TJ(max) = 175°C
VCE(on) typ. = 1.9V
C
GC E
TO-247AC
IRG7PH35UPbF
GC E
TO-247AD
IRG7PH35U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE=15V
cClamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
55
35
20
60
80
±30
210
105
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.70
–––
–––
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
3/26/10
Free Datasheet http://www.Datasheet4U.com
1 page  
IRG7PH35UPbF/IRG7PH35U-EP
80 4000
70
60 3000
EON
50
40
TJ = 175°C
30
20
TJ = 25°C
10
2000
1000
EOFF
0
4 5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage(V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V, tp = 30μs
1000
0
0 10 20 30 40
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 680μH; VCE = 600V, RG = 10Ω; VGE = 15V
3500
tdOFF
100 tF
3000
2500
EON
tdON
10
tR
2000
1500
1000
EOFF
1
0 10 20 30 40
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 680μH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
500
0
20 40 60 80 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 680μH; VCE = 600V, ICE = 20A; VGE = 15V
10000
1000
tdOFF
1000
Cies
100
tdON
tF
tR
10
0 20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 680μH; VCE = 600V, ICE = 20A; VGE = 15V
www.irf.com
100
Coes
10
0
Cres
100 200 300 400 500
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
600
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| Páginas | Total 10 Páginas | |
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