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PDF IRG7PH35UD1MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH35UD1MPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) trench IGBT Technology
• Low Switching Losses
C
• Square RBSOA
• Ultra-Low VF Diode
• 1300Vpk Repetitive Transient Capacity
G
• 100% of the Parts Tested for ILM
• Positive VCE (ON) Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
E
n-channel
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
IRG7PH35UD1MPbF
VCES = 1200V
IC = 25A, TC = 100°C
TJ(max) = 150°C
VCE(on) typ. = 1.9V @ IC = 20A
C
GC E
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
IRG7PH35UD1MPbF
Package Type
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Orderable part number
IRG7PH35UD1MPbF
Absolute Maximum Ratings
V C ES
V(B R )T r ansient
Parameter
Collector-to-Emitter Voltage
hRepetitive Transient Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
dgPulse Collector Current, VGE=15V
cClamped Inductive Load Current, VGE=20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IF M
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
1300
50
25
150
80
50
25
80
±30
179
71
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.35
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
April 24, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
IRG7PH35UD1MPbF
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
EOFF
10 20 30
40 50
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
2800
2600
2400
2200
2000
1800
EOFF
1600
1400
1200
1000
0
25 50 75 100 125
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
10000
1000
Cies
100 Coes
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
600
5 www.irf.com © 2012 International Rectifier
1000
100
tF
tdOFF
10
0
10 20 30 40
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
1000
tdOFF
100 tF
10
0
20 40 60 80 100 120
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
16
14 VCES = 600V
12 VCES = 400V
10
8
6
4
2
0
0 20 40 60 80 100
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A; L = 2.4mH
April 24, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
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