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Número de pieza | IRG4RC10UDPBF | |
Descripción | UltraFast CoPack IGBT | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRG4RC10UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in
bridge configurations
Industry standard TO-252AA package
G
E
n-channel
Lead-Free
UltraFast CoPack IGBT
VCES = 600V
VCE(on) typ. = 2.15V
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Lower losses than MOSFET's conduction and Diode
losses
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
D-PAK
TO-252AA
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
V
W
°C
Min.
Typ.
0.3 (0.01)
Max.
3.3
7.0
50
Units
°C/W
g (oz)
Details of note through are on the last page
www.irf.com
1
6/2/04
Free Datasheet http://www.Datasheet4U.com
1 page 500
400
VCCCGiroeeesEss
=
=
=
=
0V,
CCCggceec
+
+
f = 1MHz
Cgc , Cce
Cgc
SHORTED
300 Cies
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4RC10UDPbF
20 VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
IC = 5.0A
0.25
10 RG = O10h0mΩ
VGE = 15V
VCC = 480V
1
0.1
IC = 10A
IC = 5.50AA
IC = 2.5A
0.20
50
60 70 80 90
RG R,GG,aGteatReeRseisstiastnacnece(O(Ωh)m)
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
Free Datasheet http://www.Datasheet4U.com
5 Page Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
Free Datasheet http://www.Datasheet4U.com
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRG4RC10UDPBF.PDF ] |
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IRG4RC10UDPBF | UltraFast CoPack IGBT | International Rectifier |
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