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PDF 2SA1832 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1832 | |
| Descripción | PNP TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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RoHS
2SA1832
2SA1832 TRANSISTOR (PNP)
DFEATURES
Power dissipation
TPCM : 0.1 W (Tamb=25℃)
.,LCollector current
ICM : -0.15 A
Collector-base voltage
OV(BR)CBO : -50 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
Emitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
LTransition frequency
ECollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-50 V
-50 V
-5 V
-0.1 µA
-0.1 µA
120 400
-0.3 V
80 MHz
7 pF
JCLASSIFICATION OF hFE(1)
ERank
WRange
Y
120-240
GR
200-400
Marking
SY
SG
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:[email protected]
Free Datasheet http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1832.PDF ] | |
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