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PDF FDPF3860T Data sheet ( Hoja de datos )

Número de pieza FDPF3860T
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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March 2008
FDPF3860T
N-Channel PowerTrench® MOSFET
100V, 20A, 38.2m
tm
Description
• RDS(on) = 38.2m( MAX ) @ VGS = 10V, ID = 5.9A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to AC converters / Synchronous Rectification
D
GD S
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
100
±20
20
12.7
80
278
20
3.4
15
33.8
0.27
-55 to +150
300
Ratings
3.7
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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FDPF3860T pdf
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDPF3860T Rev. A
5 www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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