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PDF FS75R12KS4 Data sheet ( Hoja de datos )
| Número de pieza | FS75R12KS4 | |
| Descripción | IGBT-Module | |
| Fabricantes | Infineon | |
| Logotipo |  |
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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS75R12KS4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 70°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES
IC nom
IC
ICRM
Ptot
VGES
1200
75
100
150
500
+/-20
V
A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 3,00 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V
RGon = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 75 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V
RGoff = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
Tvj op
min. typ. max.
3,20 3,70
3,85
V
V
4,5 5,5 6,5 V
0,80 µC
5,0 Ω
5,10 nF
0,32 nF
5,0 mA
400 nA
0,12
0,13
µs
µs
0,05
0,06
µs
µs
0,31
0,36
µs
µs
0,02
0,03
µs
µs
mJ
9,00 mJ
mJ
3,80 mJ
450
A
0,25 K/W
-40 125 °C
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
1
Free Datasheet http://www.0PDF.com
1 page  
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS75R12KS4
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=7.5Ω,VCE=600V
8
Erec, Tvj = 125°C
7
6
5
VorläufigeDaten
PreliminaryData
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=75A,VCE=600V
6
Erec, Tvj = 125°C
5
4
43
3
2
2
1
1
0
0 25 50 75 100 125 150
IF [A]
TransienterWärmewiderstandDiode,Wechselrichter
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
ZthJC : Diode
0
0 5 10 15 20 25 30 35 40 45 50 55
RG [Ω]
0,1
0,01
0,001
i: 1
234
ri[K/W]: 0,06653 0,1748 0,1802 0,00848
τi[s]: 0,0015 0,0327 0,0561 0,3872
0,01 0,1
t [s]
1
10
preparedby:MK
approvedby:RS
dateofpublication:2013-10-02
revision:2.1
5
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FS75R12KS4.PDF ] | |
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