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Número de pieza | D814 | |
Descripción | NPN Transistor - 2SD814 | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de D814 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD814
base voltage 2SD814A
Collector to 2SD814
emitter voltage 2SD814A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
185
150
185
5
100
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : P(2SD814)
L(2SD814A)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO VCB = 100V, IE = 0
1 µA
Collector to emitter 2SD814
voltage
2SD814A
VCEO
IC = 100µA, IB = 0
150
185
V
Emitter to base voltage
Forward current transfer ratio
VEBO
hFE*
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
5V
90 330
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1V
Transition frequency
fT VCB = 10V, IE = –10mA, f = 200MHz
150 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
2.3 pF
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150 mV
*hFE Rank classification
Rank
hFE
Marking 2SD814
Symbol
2SD814A
Q
90 ~ 155
PQ
LQ
R
130 ~ 220
PR
LR
S
185 ~ 330
PS
LS
1
Free Datasheet http://www.0PDF.com
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet D814.PDF ] |
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