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PDF K4212 Data sheet ( Hoja de datos )
| Número de pieza | K4212 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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 1. Power MOSFET ( PDF )  Hay una vista previa y un enlace de descarga de K4212 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.nDatasheet.com
1 page  
2SK4212
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
FORWARD BIAS SAFE OPERATING AREA
1000
100
80
60
40
20
0
0
25 50 75 100 125 150 175
TC - Case Temperature - °C
100
10
1
ID(pulse)
ID(DC)
RD(SV(oGn)SL=im1ii0t eVd )
DC
TC = 25°C
Single Pulse
0.1
0.01
0.1
1
PW
= 1i00
μs
1 ms
10 ms
10 100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 3.57°C/W
1
0.1
0.01
100 μ
1m
10 m
100 m
1
Single Pulse
10 100 1000
PW - Pulse Width - s
FORWARD TRANSFER CHARACTERISTICS
30
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
20
TA = 125°C
75°C
25°C
10 −55°C
VDS = 10 V
Pulsed
0
012345
VGS - Gate to Source Voltage - V
3
2
1
VDS = VGS
ID = 250 μA
0
-75 -25
25
75 125
Tch - Channel Temperature - °C
175
Data Sheet D19564EJ1V0DS
3
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet K4212.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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