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PDF CCS050M12CM2 Data sheet ( Hoja de datos )
| Número de pieza | CCS050M12CM2 | |
| Descripción | 50A Silicon Carbide Six-Pack (Three Phase) Module | |
| Fabricantes | Cree | |
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CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 25 mΩ
EOFF (TJ = 150˚C)
0.6 mJ
Features
• Ultra Low Loss
• Zero Reverse Recovery Current
• Zero Turn-off Tail Current
• High-Frequency Operation
•
•
Positive Temperature Coefficient
Cu Baseplate, AlN DBC
on
VF
and
VDS(on)
System Benefits
• Enables Compact and Lightweight Systems
• High Efficiency Operation
• Ease of Transistor Gate Control
• Reduced Cooling Requirements
• Reduced System Cost
Applications
•
•
•
•
•
•
Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Package
Part Number
CCS050M12CM2
Package
Six-Pack
Marking
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS Drain - Source Voltage
VGS Gate - Source Voltage
ID Continuous Drain Current
ID(pulse)
TJ
TC ,TSTG
Visol
LStray
M
G
PD
Pulsed Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
Power Dissipation
1.2
+25/-10
87
59
250
150
kV
V
A VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
A PRualtseeliwmidittehdtbP y=T2jm5a0x,TμCs= 25˚C
˚C
-40 to +125
2.5
˚C
kV DC, t = 1 min
30 nH Measured from pins 25-26 to 27-28
5.0 N-m
180 g
312
W TC = 25 ˚C, TJ ≤ 150 ˚C
Fig. 26
Fig. 28
Fig. 27
Subject to change without notice.
www.cree.com
1
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Typical Performance
-3 -2.5
-2 -1.5 -1 -0.5
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
0
0
-25
-50
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 25 °C
tp < 50 µs
-75
-100
Figure 13. 3rd Quadrant Characteristic at 25 ˚C
20
Conditions:
VDS = 800 V
15
IDS = 50 A
IGS = 10 mA
10
5
0
-5
0 30 60 90 120 150 180
Gate Charge (nC)
Figure 15. Typical Gate Charge Characteristics
10000
1000
CISS
COSS
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
1
0 250 500 750 1000
Drain-Source Voltage, VDS (V)
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
-3 -2.5 -2 -1.5 -1 -0.5
0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
-25
-50
VGS = 20 V
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 150 °C
tp < 50 µs
-75
-100
Figure 14. 3rd Quadrant Characteristic at 150 ˚C
10000
1000
CISS
COSS
100
CRSS
10
Conditions:
f = 1 MHz
VAC = 25 mV
1
0 50
100 150
Drain-Source Voltage, VDS (V)
200
250
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 250 V)
3.0
Conditions:
VDD = 600 V
2.5
TJ = 150 °C
L = 200 µH
RG = 20 Ohms
VGS = +20V/-5V
2.0
1.5
Eon
Eoff
1.0
0.5
0.0
0
25 50 75 100
Drain to Source Current, IDS (A)
Figure 18. Inductive Switching Energy vs.
Drain Current For VDS = 600V, RG = 20 Ω
125
5 CCS050M12CM2,Rev. B
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| PDF Descargar | [ Datasheet CCS050M12CM2.PDF ] | |
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