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PDF CAS100H12AM1 Data sheet ( Hoja de datos )

Número de pieza CAS100H12AM1
Descripción 100A Silicon Carbide Half-Bridge Module
Fabricantes Cree 
Logotipo Cree Logotipo



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CAS100H12AM1
1.2 kV, 100A Silicon Carbide
Half-Bridge Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
Ultra Low Loss
Zero Turn-off Tail Current from MOSFET
Zero Reverse Recovery Current from Diode
High-Frequency Operation
Positive Temperature
AlSiC Baseplate, AMB
CSoi3eNff4icSieunbtstornatVeF
and
VDS(on)
System Benefits
Enables Compact and Lightweight Systems
High Efficiency Operation
Ease of Transistor Gate Control
Reduced Cooling Requirements
Reduced System Cost
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 16 mΩ
EOFF (TJ = 125˚C)
1.8 mJ
Package
Applications
High Power Converters
Motor Drives
Solar Inverters
UPS and SMPS
Induction Heating
Part Number
Package
Marking
CAS100H12AM1 Half-Bridge Module CAS100H12AM1
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS
VGS
ID
ID(pulse)
TJ
TC ,TSTG
Visol
LStray
M
G
Pd
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current
Pulsed Drain Current
1.2
-5/+20
168
117
400
kV
V
A VGS = 20V, TC=25˚C
VGS = 20V, TC=90˚C
A Pulse width Limited by Tjmax,TC = 25˚C
Junction Temperature
150 ˚C
Case and Storage Temperature Range
-55 to +125 ˚C
Case Isolation Voltage
6 kV AC, t=1min
Stray Inductance
Mounting Torque
Weight
Clearance Distance
Creepage Distance
Power Dissipation
20
2.94
150
12.2
17.3
20.2
568
nH Measured from D1 to S2
Nm
g Measured without fasteners
mm Terminal to terminal
mm Terminal to terminal
mm Terminal to base plate
W
Subject to change without notice.
www.cree.com
Fig. 25
Fig 24
1
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CAS100H12AM1 pdf
Typical Performance
25
Conditions:
VGS = 20 V
20 tp < 50 µs
15
10
5
TJ = -55 °C
TJ = 150 °C
TJ = 100 °C
TJ = 25 °C
120
Conditions:
VDS = 20 V
100 tp < 50 µs
80
60
40
20
TJ = 150 °C
TJ=25 °C
TJ = -55 °C
0
0 20 40 60 80 100 120 140 160
Drain Source Current, IDS (A)
Figure 7. On-Resistance vs. Drain Current
for Various Temperatures
180
4.5
4
3.5
3
2.5
2
1.5
1
0.5 Conditions:
VDS = VGS
0
-55 -30
IDS=5 mA
-5 20 45 70 95
Junction Temperature, TJ (°C)
IDS = 50 mA
120 145
Figure 9. Threshold Voltage vs Junction Temperature
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
0
Conditions:
TJ = 25 °C
tp < 50 µs
-25
-50
-75
-100
-125
VGS = -3 V
VGS = -4 and -5 V
VGS = 0 V
VGS = -1 V
VGS = -2 V
Drain-Source Voltage, VDS (V)
Figure 11. Typical Diode Characteristics
TJ = 25ºC
-150
-175
-200
0
0 5 10 15
Drain-Source Voltage, VDS (V)
Figure 8. Transfer Characteristics for
Various Junction Temperatures
20
-4.0 -3.5
Conditions:
TJ = -55 °C
tp < 50 µs
-3.0 -2.5
-2.0 -1.5
-1.0 -0.5
0.0
0
-25
-50
-75
-100
-125
VGS = 0, -1, -2, -3 -4 -5 V
-150
-175
Drain-Source Voltage, VDS (V)
Figure 10. Typical Diode Characteristics
TJ = -55ºC
-200
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0
Conditions:
TJ = 150 °C
tp < 50 µs
VGS = 0 V
VGS = -2 V
VGS = -5 V
VGS = -1 V
VGS = -4V
VGS = -3 V
-0.5
0.0
0
-25
-50
-75
-100
-125
-150
-175
Drain-Source Voltage, VDS (V)
Figure 12. Typical Diode Characteristics
TJ = 150ºC
-200
5 CAS100H12AM1,Rev. C
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CAS100H12AM1 arduino
Package Dimensions (mm)
Package Dimensions (mm)
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
11 CAS100H12AM1,Rev. C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Free Datasheet http://www.nDatasheet.com

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