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PDF K3580-01MR Data sheet ( Hoja de datos )
| Número de pieza | K3580-01MR | |
| Descripción | MOSFET ( Transistor ) - 2SK3580-01MR | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK3580-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
300 V
VDSX *5
270 V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±12
±48
A
A
Equivalent circuit schematic
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
12 A
Drain(D)
Maximum Avalanche Energy
EAS *1
193 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
dV/dt *3
PD Ta=25°C
Tc=25°C
Tch
Tstg
VISO *6
5
2.16
35
+150
-55 to +150
2
kV/µs
W
°C
°C
kVrms
Gate(G)
Source(S)
*1 L=2.32mH, Vcc=48V *2 Tch<=150°C *3 IF<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
*4 VDS=<300V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
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Item
Symbol
Test Conditions
Min. Typ. Max. Units
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
ID=250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V VDS=0V
ID=6A
VGS=10V
ID=6A VDS=25V
VDS=25V
Tch=25°C
Tch=125°C
300
3.5
5
10
1.22
10.5
980
4.5
25
250
100
0.28
1470
V
V
µA
nA
Ω
S
pF
Output capacitance
Coss
VGS=0V
170 255
Reverse transfer capacitance
Turn-on time ton
Crss
td(on)
f=1MHz
VCC=150V ID=6A
5.5 11
14.5 29
ns
Turn-off time toff
tr
td(off)
tf
VGS=10V
RGS=10 Ω
6.5 9.8
28 42
46
Total Gate Charge
QG VCC=150V
23 34.5 nC
Gate-Source Charge
QGS
ID=12A
9.7 14.6
Gate-Drain Charge
QGD
VGS=10V
5.6 11.2
Avalanche capability
IAV L=100µH Tch=25°C
12
A
Diode forward on-voltage
VSD IF=12A VGS=0V Tch=25°C
1.20
1.80 V
Reverse recovery time
Reverse recovery charge
trr IF=12A VGS=0V
Qrr -di/dt=100A/µs Tch=25°C
0.2
1.80
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
3.57
58.0
Units
°C/W
°C/W
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3580-01MR.PDF ] | |
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