DataSheet.es    


PDF K9F2808U0C Data sheet ( Hoja de datos )

Número de pieza K9F2808U0C
Descripción FLASH MEMORY
Fabricantes Samsung 
Logotipo Samsung Logotipo



Hay una vista previa y un enlace de descarga de K9F2808U0C (archivo pdf) en la parte inferior de esta página.


Total 30 Páginas

No Preview Available ! K9F2808U0C Hoja de datos, Descripción, Manual

K9F2808U0C
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
1.0 TBGA PKG Dimension Change
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm
2.0 1.A3 Pin assignment of TBGA Package is changed.(Page 4)
(before) NC --> (after) Vss
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 33)
2.1 The min. Vcc value 1.8V devices is changed.
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Draft Date
Apr. 15th 2002
Sep. 5th 2002
Dec.10th 2002
Mar. 6th 2003
Remark
Advance
Advance
Preliminary
2.2 Pb-free Package is added.
K9F2808U0C-FCB0,FIB0
K9F2808Q0C-HCB0,HIB0
K9F2816U0C-HCB0,HIB0
K9F2816U0C-PCB0,PIB0
K9F2816Q0C-HCB0,HIB0
K9F2808U0C-HCB0,HIB0
K9F2808U0C-PCB0,PIB0
Mar. 13rd 2003
2.3 Some AC parameters are changed(K9F28XXQ0C).
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45
After 60 20 40 60 20 40 40 55
2.4 1. New definition of the number of invalid blocks is added.
Mar. 26th 2003
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb
memory space)
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
2.5 1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted.
May. 24th 2003
2. tWC is changed.
45ns(Before) ---> 50ns(After)
3. Minimum valid block number is changed.
2.6
1004(Before) --> 1009(After)
1. Minimum valid block number is changed.
1009(Before) --> 1004(After)
Oct. 10th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
Free Datasheet http://www.datasheetlist.com/

1 page




K9F2808U0C pdf
K9F2808U0C
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F2808U0C-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
0.70 MAX
0.58±0.04
#1 #48
#24
#25
(0.01Min)
17.00±0.20
5
0.45~0.75
Free Datasheet http://www.datasheetlist.com/

5 Page





K9F2808U0C arduino
K9F2808U0C
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Symbol
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
K9F2808U0C
0
10
0
10
25
0
10
20
10
50
15
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
CE Access Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
K9F2808U0C-
Y,P,V,F only
Last RE High to Busy
(at sequential read)
CE High to Ready(in case of interception by
CE at read)
CE High Hold Time(at the last serial read)(2)
Symbol
tR
tAR
tCLR
tRR
tRP
tWB
tRC
tCEA
tREA
tRHZ
tCHZ
tOH
tREH
tIR
tWHR
tRST
tRB
tCRY
tCEH
K9F2808U0C
- 10
10 -
10 -
20 -
25 -
- 100
50 -
- 45
- 30
- 30
- 20
15 -
15 -
0-
60 -
- 5/10/500(1)
- 100
- 50 +tr(R/B)(3)
100 -
NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
11
Free Datasheet http://www.datasheetlist.com/

11 Page







PáginasTotal 30 Páginas
PDF Descargar[ Datasheet K9F2808U0C.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K9F2808U016M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor
K9F2808U0A16M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor
K9F2808U0A-16M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor
K9F2808U0A-YCB016M x 8 Bit NAND Flash MemorySamsung semiconductor
Samsung semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar