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PDF NTGD3149C Data sheet ( Hoja de datos )
| Número de pieza | NTGD3149C | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTGD3149C
Power MOSFET
Complementary, 20 V, +3.5/−2.7 A,
TSOP−6 Dual
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size (3 x 3 mm) Dual TSOP−6 Package
• Leading Edge Trench Technology for Low On Resistance
• Reduced Gate Charge to Improve Switching Response
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Conversion Circuits
• Load/Power Switching with Level Shift
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage (N−Ch & P−Ch)
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
t≤5s
Steady State
t≤5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
ID
PD
20
±8
3.2
2.3
3.5
2.4
1.7
2.7
0.9
1.1
Pulsed Drain
Current
N−Ch
P−Ch
tp = 10 ms
IDM
11
8.0
Operating Junction and Storage Temperature TJ, TSTG −55 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 0.8
TL 260
Unit
V
V
A
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1) RqJA
140 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V(BR)DSS
N−Ch
20 V
P−Ch
−20 V
RDS(on) MAX
60 mW @ 4.5 V
90 mW @ 2.5 V
110 mW @ 4.5 V
145 mW @ 2.5 V
ID MAX (Note 1)
3.5 A
−2.7 A
D1 S2
G1 G2
S1 D2
N−CHANNEL MOSFET P−CHANNEL MOSFET
1
TSOP−6
CASE 318G
STYLE 13
MARKING
DIAGRAM
CC MG
G
1
CC = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
1
Publication Order Number:
NTGD3149C/D
Free Datasheet http://www.datasheetlist.com/
1 page  
NTGD3149C
TYPICAL CHARACTERISTICS (N−CHANNEL)
600
550
500
450
400
350
300
250
200
150
100
50
0
0
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
2.0 4.0 6.0 8.0 10 12 14 16 18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Nch Capacitance Variation
20
100
VDD = 10 V
ID = 3.5 A
VGS = 4.5 V
td(off)
4.5 QT
4.0
3.5
3.0
2.5
2.0
Q1
1.5
Q2
1.0
0.5
0
0
ID = 3.5 A
TJ = 25°C
1.0 2.0 3.0 4.0 5.0
QG, TOTAL GATE CHARGE (nC)
Figure 8. Nch Gate−to−Source Voltage vs.
Total Charge
3.5
3.0
VGS = 0 V
TJ = 25°C
2.5
10 td(on)
tr
1.0
1.0
tf
10
RG, GATE RESISTANCE (W)
Figure 9. Nch Resistive Switching Time
Variation vs. Gate Resistance
100
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Nch Diode Forward Voltage vs.
Current
http://onsemi.com
5
Free Datasheet http://www.datasheetlist.com/
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