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PDF K9GAG08U0F Data sheet ( Hoja de datos )
| Número de pieza | K9GAG08U0F | |
| Descripción | 16Gb F-die NAND Flash | |
| Fabricantes | Samsung | |
| Logotipo |  |
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Rev.1.1, May. 2011
K9GAG08U0F
16Gb F-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2011 Samsung Electronics Co., Ltd. All rights reserved.
-1-
Free Datasheet http://www.datasheet-pdf.com/
1 page  
K9GAG08U0F
datasheet
Rev. 1.1
FLASH MEMORY
1.0 INTRODUCTION
1.1 Features
• Voltage Supply :
- VCC : 3.3V (2.7V ~ 3.6V)
- VccQ : 3.3V (2.7V ~ 3.6V )
• Organization of Single die
- Memory Cell Array : 8,704 x 259.5K x 8bit
- Data Register : (8K + 512) x 8bit
• Products
- K9GAG08U0A : Unit device x 1
• Automatic Program and Erase
- Page Program : (8K + 512)Byte
- Block Erase : (1M + 64K)Byte
• Page Read Operation
- Random Read(tR) : 200μs(Max.)
- Serial Access : 25ns(Min.)
• Write Cycle Time
- Page Program time : 1.3ms(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement : 24bit/1KB
- Endurance & Data Retention : Please refer to the Qualification repot
• Command Driven Operation
• Unique ID for Copyright Protection
• Package
- K9GAG08U0F-SCB0 : Pb/Halogen-Free Package
48-Pin TSOP (12 x 20 / 1.00 mm pitch)
1.2 Product List
Part Number
K9GAG08U0F
Density
16Gb
Interface
Conventional
Organization
x8
Vcc Range
2.7V ~ 3.6V
VccQ Range
2.7V ~ 3.6V
PKG Type
48TSOP
1.3 General Description
The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation
can be performed in typical 1.3ms on the 8,704-byte page and an erase operation can be performed in typical 1.5ms on a (1M+64K)byte block. Data in
the data register can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining
of data. Even the write-intensive systems can take advantage of the K9GAG08U0F′s extended reliability of P/E cycles which are presented in the Qualifi-
cation report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0F is an optimum solution for large nonvol-
atile storage applications such as solid state file storage and other portable applications requiring non-volatility.
-5-
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5 Page 
K9GAG08U0F
datasheet
Rev. 1.1
FLASH MEMORY
2.1 Absolute Maximum Ratings
Parameter
Symbol
Rating
VCC -0.6 to +4.6
Voltage on any pin relative to VSS
VIN VccQ(3.3V)
-0.6 to +4.6
VI/O VccQ(3.3V)
-0.6 to +4.6
Storage Temperature
TSTG
-65 to +100
Short Circuit Current
Ios 5
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins at 3.3VccQ. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is 4.6V at 3.3VccQ which, during transitions, may overshoot to VccQ+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Unit
V
°C
mA
2.2 Recommended Operating Conditions
(Voltage reference to GND, K9GAG08U0F-SCB0:TA=0 to 70°C(1))
Parameter
Symbol
Min
Typ.
Max Unit
Supply Voltage
VCC 2.7 3.3 3.6 V
Ground Voltage
VSS 0 0 0 V
Supply Voltage for I/O signaling (3.3V)
VccQ
2.7
3.3
3.6 V
Ground Voltage for I/O signaling
VssQ
0
0
0V
NOTE :
1) Data retention is not guaranteed on out of operating condition temperature.
2.3 DC And Operating Characteristics(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Operating
Current
Page Read with Serial
Access
Program
ICC1
ICC2
tRC=25ns
CE=VIL, IOUT=0mA
-
Erase
ICC3
-
Stand-by Current(CMOS)
ISB CE=VccQ-0.2, WP=0V/VccQ
Input Leakage Current
ILI VIN=0 to VccQ(max)
Output Leakage Current
ILO VOUT=0 to VccQ(max)
Input High Voltage
VIH(1)
-
Input Low Voltage, All inputs
VIL(1)
-
Output High Voltage Level
VccQ(3.3V)
VOH
IOH=-400μA
Output Low Voltage Level
VOL IOL= 2.1mA
Output Low Current(R/B)
IOL(R/B)
VOL=0.4V
NOTE :
1) VIL can undershoot to -0.4V and VIH can overshoot to VccQ +0.4V for durations of 20ns or less.
2) Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
VccQ(3.3V)
Min Typ
Max
- 30 50
-
-
-
0.8 xVccQ
-0.3
2.4
-
8
10
-
-
-
-
-
-
10
50
±10
±10
VccQ +0.3
0.2 xVccQ
-
0.4
-
Unit
mA
μA
V
mA
- 11 -
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