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Número de pieza | ME4953 | |
Descripción | Dual P-Channel 30V (D-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME4953 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual P-Channel 30V (D-S) MOSFET
ME4953/ME4953-G
GENERAL DESCRIPTION
The ME4953 is the Dual P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and low in-line power loss are needed
in a very small outline surface mount package.
FEATURES
● RDS(ON)≦60mΩ@VGS=-10V
● RDS(ON)≦90mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
PIN CONFIGURATION
(SOP-8)
Top View
e Ordering Information: ME4953 (Pb-free)
ME4953-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
Tstg
RθJA
RθJC
Limit
-30
±20
-5.3
-4.3
-30
-1.7
2.0
1.3
-55 to 150
-55 to 150
T≦10 sec
47
Steady State
45
75
JuAlpy,r,22000087-V-Veerr43.0.0
Unit
V
V
A
A
A
W
℃
℃
℃/W
℃/W
01Free Datasheet http://www.datasheet-pdf.com/
1 page Dual P-Channel 30V (D-S) MOSFET
ME4953/ME4953-G
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
JuAlpy,r,22000087-V-Veerr43.0.0
05Free Datasheet http://www.datasheet-pdf.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME4953.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME4953 | Dual P-Channel 30V (D-S) MOSFET | Matsuki |
ME4953-G | Dual P-Channel 30V (D-S) MOSFET | Matsuki |
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