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PDF IRGP4063-EPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4063-EPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
IRGP4063PbF
IRGP4063-EPbF
C
G
E
n-channel
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
CC
GC E
TO-247AC
IRGP4063PbF
GC E
TO-247AD
IRGP4063-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
96 h
48
144
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
V
A
A
V
W
°C
Units
°C/W
1 www.irf.com
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1 page  
IRGP4063PbF/IRGP4063-EPbF
1000
5000
tdOFF
4500
4000
3500
EOFF
EON
100
tdON
tF
tR
3000
2500
2000
1500
10
0
20 40 60 80 100
IC (A)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
1000
0
25 50 75 100 125
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
18 400
tdOFF
16 350
tR
tdON
100
tF
14
12
10
8
300
250
200
150
6 100
10
0
25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
10000
Cies
1000
Coes
100
Cres
10
0
20 40 60 80
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
100
4 50
8 10 12 14 16 18
VGE (V)
Fig. 16 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
16
14 VCES = 300V
12 VCES = 400V
10
8
6
4
2
0
0 25 50 75 100
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGP4063-EPBF.PDF ] | |
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