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PDF KM684002AI Data sheet ( Hoja de datos )

Número de pieza KM684002AI
Descripción 512Kx8 Bit High Speed Static RAM
Fabricantes Samsung 
Logotipo Samsung Logotipo



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PRELIMINARY
KM684002A, KM684002AE, KM684002AI
CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial Temperature Range.
Revision History
RevNo.
Rev. 0.0
Rev. 0.5
Rev. 1.0
Rev. 2.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
0.1. Replace Design Target to Preliminary.
0.2. Delete 12ns part but add 17ns part.
0.3. Relax D.C and A.C parameters and insert new parameter(Icc1)
with the test condition.
0.3.1. Insert Icc1 parameter with the test condition as address is
increased with binary count.
0.3.2. Relax D.C and A.C parameters.
Items
Previous spec.
(15/ - /20ns part)
Relaxed spec.
(15/17/20ns part)
Icc
190/ - /180mA
220/215/210mA
tCW
10/ - /12ns
12/13/14ns
tAW
10/ - /12ns
12/13/14ns
tWP(OE=H)
10/ - /12ns
12/13/14ns
tWP1(OE=L)
12/ - /14ns
15/17/20ns
tDW
7/ - /9ns
8/9/10ns
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Delete Icc1 parameter with the test condition.
1.3. Update D.C parameters.
Items
Previous spec.
(15/17/20ns part)
Updated spec.
(15/17/20ns part)
Icc
220/215/210mA
170/165/160mA
1.4. Add the test condition for VOH1 with Vcc=5V±5% at 25°C
1.5. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Low fixed)
2.1 Add extended and industrial temperature range parts.
Draft Data
Jun. 14th, 1996
Sep. 16th, 1996
Remark
Design Target
Preliminary
Jun. 5th, 1997
Final
Jun. 5th, 1997
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
February 1998
Free Datasheet http://www.datasheet-pdf.com/

1 page




KM684002AI pdf
PRELIMINARY
KM684002A, KM684002AE, KM684002AI
CMOS SRAM
WRITE CYCLE
Parameter
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
tDW
tDH
tOW
KM684002A-15
Min Max
15 -
12 -
0-
12 -
12 -
15 -
0-
07
8-
0-
3-
KM684002A-17
Min Max
17 -
13 -
0-
13 -
13 -
17 -
0-
08
9-
0-
3-
NOTE: The above parameters are also guaranteed at extended and industrial temperature ranges.
KM684002A-20
Min Max
20 -
14 -
0-
14 -
14 -
20 -
0-
09
10 -
0-
3-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tOH
Previous Valid Data
tAA
tRC
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
OE
Data out
VCC
Current
ICC
ISB
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tPU
50%
tRC
tHZ(3,4,5)
tOHZ
Valid Data
tOH
tPD
50%
-5-
Rev 2.0
February 1998
Free Datasheet http://www.datasheet-pdf.com/

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