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PDF 13NK50Z Data sheet ( Hoja de datos )
| Número de pieza | 13NK50Z | |
| Descripción | STF13NK50Z | |
| Fabricantes | STMicroelectronics | |
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STF13NK50Z
STP13NK50Z, STW13NK50Z
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247
Zener-protected SuperMESHTM Power MOSFET
Features
Type
STF13NK50Z
STP13NK50Z
STW13NK50Z
VDSS
RDS(on)
max
ID
Pw
500 V
500 V
500 V
<0.48 Ω 11 A
<0.48 Ω 11 A
<0.48 Ω 11 A
30 W
140 W
140 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STF13NK50Z
STP13NK50Z
STW13NK50Z
Marking
F13NK50Z
P13NK50Z
W13NK50Z
Package
TO-220FP
TO-220
TO-247
March 2009
Rev 2
Packaging
Tube
Tube
Tube
1/15
www.st.com
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1 page  
STx13NK50Z
Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A, VGS=0
ISD=6.5 A,
di/dt = 100 A/µs,
VDD=40 V, Tj=25 °C
Figure 21
ISD=6.5 A,
di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
Figure 21
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
1.6 V
380 ns
3.4 µC
18 A
425 ns
3.9 µC
18.5 A
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO (1)
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
5/15
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5 Page 
STx13NK50Z
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70 0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
F 1.23
1.32 0.048
0.051
H1 6.20
6.60 0.244
0.256
J1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93 0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
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