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PDF FGA20S120M Data sheet ( Hoja de datos )

Número de pieza FGA20S120M
Descripción 20A Shorted-Anode IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FGA20S120M Hoja de datos, Descripción, Manual

March 2010
FGA20S120M
1200V, 20A Shorted-Anode IGBT
tm
Features
• High speed switching
• Low saturation voltage: VCE(sat) =1.55V @ IC = 20A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave Oven
• Soft switching Application
General Description
Using advanced Field Stop Trench and shorted-anode technol-
ogy, Fairchild’s 1200V Shorted-Anode Trench IGBTs offer supe-
rior conduction and switching performances, and easy parallel
operation with exceptional avalanche capability. This device is
designed for Induction heating Microvewave Oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
©2010 Fairchild Semiconductor Corporation
FGA20S120M Rev. A
1
G
E
Ratings
1200
±25
40
20
60
40
20
348
174
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.43
0.43
40
Units
V
V
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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FGA20S120M pdf
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs.
Collector Current
3000
1000
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
tr
100
td(on)
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
800
600
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
400
td(off)
tf
10
10
20 30 40
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate resistance
5000
Eoff
50
200
10
20 30 40
Collector Current, IC [A]
Figure 16. Switching Loss vs.
Collector Current
5000
Eoff
50
1000
Eon
100
0
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC
10 20 30 40 50 60 70
Gate Resistance, RG []
Figure 17. Turn-Off Switching SOA Characteristics
Collector Currrent
100
1000
Eon
10010
Common Emitter
VGE = 15V, RG = 10W
TC = 25oC
TC = 175oC
20 30 40
Collector Current, IC [A]
50
Figure 18. Forward Characteristics
30
10
TJ = 25oC
TJ = 175oC
10
1
Safe Operating Area
VGE = 15V, TC = 175oC
1
1 10
100
1000
Collector-Emitter Voltage, VCE [V]
0.1
0.0
TC = 25oC
TC = 175oC
0.5 1.0 1.5
Forward Voltage, VF [V]
2.0
FGA20S120M Rev. A
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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