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PDF FGA180N33ATD Data sheet ( Hoja de datos )

Número de pieza FGA180N33ATD
Descripción 330 V PDP Trench IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGA180N33ATD
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 180 A
• High Input Impedance
• RoHS Complaint
Applications
• PDP TV
October 2013
General Description
Using novel trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP TV appli-
cations where low conduction and switching losses are essen-
tial.
C
G DS
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* IC_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
330
± 30
180
450
390
156
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.32
0.82
40
Unit
V
V
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGA180N33ATD Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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FGA180N33ATD pdf
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
40A
4
180A
90A
IC = 20A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 100V
200V
20
6
3
0
0 30 60 90 120 150 180
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100 tr
10
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
Figure 8. Capacitance Characteristics
6000
Common Emitter
VGE = 0V, f = 1MHz
Cies TC = 25oC
4000
2000
Coes
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
1000
IC MAX (Pulse)
100
10 IC MAX (Continuous)
10μs
100μs
1ms
10ms
DC Operation
1 *Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5000
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
td(off)
tf
100
70
0
20 40 60 80
Gate Resistance, RG [Ω]
100
©2011 Fairchild Semiconductor Corporation
FGA180N33ATD Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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