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PDF FDS6690AS Data sheet ( Hoja de datos )
| Número de pieza | FDS6690AS | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2008
FDS6690AS
30V N-Channel PowerTrench® SyncFET™
tm
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6690AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Low side notebooks
Features
• 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V
RDS(ON) max= 15 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky diode
• Low gate charge (16nC typical)
• High performance trench technology for extremely low
RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690AS
FDS6690AS
13’’
54
63
72
81
Ratings
30
±20
10
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6690AS Rev A2(X)
Free Datasheet http://www.Datasheet-PDF.com/
1 page  
Typical Characteristics
10
ID =10A
8
6
4
VDS = 10V
20V
15V
2
0
0 3 6 9 12 15 18 21
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1400
1200
f = 1MHz
VGS = 0 V
1000
800
Ciss
600
400
Coss
200
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690AS Rev A2(X)
Free Datasheet http://www.Datasheet-PDF.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS6690AS.PDF ] | |
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