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PDF F12N60C Data sheet ( Hoja de datos )

Número de pieza F12N60C
Descripción FQPF12N60C
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! F12N60C Hoja de datos, Descripción, Manual

FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
September 2007
QFET ®
Features
• 12A, 600V, RDS(on) = 0.65@VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FQP12N60C FQPF12N60C
600
12 12*
7.4 7.4*
48 48*
± 30
870
12
22.5
4.5
225 51
1.78 0.41
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP12N60C FQPF12N60C
0.56 2.43
0.5 --
62.5 62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQP12N60C / FQPF12N60C Rev. B1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/

1 page




F12N60C pdf
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0.0 1
sin g le p u lse
N otes :
1.
2.
3.
ZD θu JtCy(
T JM -
t)
F
T
= 0.56 /W M
a
C
ct
=
or,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu are W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
D = 0.5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0.0 1
sin g le p u ls e
1 0 -2
N otes :
1.
2.
3.
ZDθu JtCy(
TJM -
t) = 2.43 /W M
Fa
TC
ct
=
o r,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
FQP12N60C / FQPF12N60C Rev. B1
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/

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