|
|
Número de pieza | F12N60C | |
Descripción | FQPF12N60C | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de F12N60C (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
September 2007
QFET ®
Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FQP12N60C FQPF12N60C
600
12 12*
7.4 7.4*
48 48*
± 30
870
12
22.5
4.5
225 51
1.78 0.41
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP12N60C FQPF12N60C
0.56 2.43
0.5 --
62.5 62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQP12N60C / FQPF12N60C Rev. B1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/
1 page Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0.0 1
sin g le p u lse
N otes :
1.
2.
3.
ZD θu JtCy(
T JM -
t)
F
T
= 0.56 /W M
a
C
ct
=
or,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu are W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
D = 0.5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0.0 1
sin g le p u ls e
1 0 -2
N otes :
1.
2.
3.
ZDθu JtCy(
TJM -
t) = 2.43 /W M
Fa
TC
ct
=
o r,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
FQP12N60C / FQPF12N60C Rev. B1
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet F12N60C.PDF ] |
Número de pieza | Descripción | Fabricantes |
F12N60C | FQPF12N60C | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |