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PDF 40N10 Data sheet ( Hoja de datos )

Número de pieza 40N10
Descripción DTU40N10
Fabricantes DinTek 
Logotipo DinTek Logotipo



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No Preview Available ! 40N10 Hoja de datos, Descripción, Manual

N-Channel 100-V (D-S) MOSFET
DT81
www.din-tek.jp
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100 0.030 at VGS = 10 V
0.034 at VGS = 6 V
ID (A)
40
37.5
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• Low Thermal Resistance Package
TO-252
D
GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.1 mH
EAR
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
(PCB Mount)c
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Symbol
RthJA
RthJC
Limit
100
± 20
40
23
75
35
61
107b
3.75
- 55 to 175
Limit
40
1.4
Available
RoHS*
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1
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40N10 pdf
THERMAL RATINGS
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC - Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
DT81
www.din-tek.jp
1000
Limited
by rDS(on)*
100
10
1 TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
DC, 100 ms
0.1
0.1
* VGS
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
5
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