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Número de pieza | ME60N03AS | |
Descripción | 25V N-Channel Enhancement Mode MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME60N03AS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 25V N-Channel Enhancement Mode MOSFET
VDS=25V
RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ
RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for DC/DC converters and motor drivers
Fully characterized avalanche voltage and current
ME60N03AS
APPLICATIONS
● Motherboard (V-Core)
● DC/DC Converter
● Load Switch
● LCD Display inverter
● IPC
PIN CONFIGURATION
(TO-252)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(Tj=150℃)* TC=25℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃
TC=70℃
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse(L=0.1mH,Rg=25Ω)
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
EAS
RθJA
RθJC
Limit
25
±20
53
100
40
25
-55 to 150
50
T≦10 sec
Steady State
3.1
15
40
Unit
V
V
A
A
W
℃
mJ
℃/W
℃/W
Sep, 2008 – Version 2.1
01Free Datasheet http://www.datasheet4u.net/
1 page 25V N-Channel Enhancement Mode MOSFET
ME60N03AS
TO-252 Package Outline
SYMBOL
A
A1
B
B1
B2
C
D
D2
D3
H
E
E2
L
L1
L2
L3
P
MILLIMETERS (mm)
MIN
2.00
MAX
2.50
0.90
1.30
0.50
0.85
0.50
0.80
0.50
1.00
0.40
0.60
5.20
5.70
6.50
7.30
2.20
3.00
9.50
10.50
6.30
6.80
4.50
5.50
1.30
1.70
0.90
1.70
0.50
1.10
0 0.30
2.00
2.80
Sep, 2008 – Version 2.1
05Free Datasheet http://www.datasheet4u.net/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME60N03AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME60N03A | 25V N-Channel Enhancement Mode MOSFET | Matsuki |
ME60N03AS | 25V N-Channel Enhancement Mode MOSFET | Matsuki |
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