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PDF IRGP4066D-EPBF Data sheet ( Hoja de datos )

Número de pieza IRGP4066D-EPBF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGP4066D-EPBF Hoja de datos, Descripción, Manual

PD - 97576
IRGP4066DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP4066D-EPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 75A
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
CC
GCE
E
C
G
TO-247AC
IRGP4066DPbF
TO-247AD
IRGP4066D-EPbF
G
Gate
C
Collector
E
Emitter
Max.
600
140
90
75
225
300
140
90
300
±20
±30
454
227
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.0
–––
40
Units
°C/W
www.irf.com
10/08/2010
Free Datasheet http://www.datasheet4u.net/

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IRGP4066D-EPBF pdf
IRGP4066DPbF/IRGP4066D-EPbF
12000
1000
10000
8000
6000
EON
tdOFF
100 tF
4000
2000
EOFF
tdON
tR
0
0 25 50 75 100 125 150
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
11000
10
0
50 100 150
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
10000
9000
7000
5000
3000
EON
EOFF
1000
tdOFF
100 tR
tdON
tF
1000
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
35
10
0
20 40 60 80 100 120
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
30
30 RG = 5.0Ω
25
RG = 10Ω
25
20 RG = 47Ω
15 RG = 100Ω
10
20 40 60 80 100 120 140
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
160
20
15
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
www.irf.com
5Free Datasheet http://www.datasheet4u.net/

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IRGP4066D-EPBF arduino
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRGP4066DPbF/IRGP4066D-EPbF
TO-247AD Part Marking Information
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010
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