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PDF B1416 Data sheet ( Hoja de datos )

Número de pieza B1416
Descripción PNP Transistor - 2SB1416
Fabricantes Panasonic 
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Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD2136
Features
High forward current transfer ratio hFE which has satisfactory
linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing automatic insertion with radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
5
3
5
1.5
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0
60
V
Base-emitter voltage
VBE VCE = −4 V, IC = −3 A
1.8 V
Collector-emitter cutoff current (E-B short) ICES VCE = −60 V, VBE = 0
200 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0
300 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
1 mA
Forward current transfer ratio
hFE1 * VCE = −4 V, IC = −1 A
40 250
hFE2 VCE = −4 V, IC = −3 A
10
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = − 0.375A
1.2 V
Transition frequency
fT VCB = −5 V, IE = 0.1 A, f = 200 MHz 270 MHz
Turn-on time
ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs
Storage time
tstg
1.2 µs
Fall time
tf
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE1
40 to 90
70 to 150
120 to 250
Publication date: March 2003
SJD00071BED
1
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