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Número de pieza | FDA20N50F | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDA20N50F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! March 2013
FDA20N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 22 A, 260 m
Features
• RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 11 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET®MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
• AC-DC Power Supply
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0
1
FDA20N50F
500
±30
22
13
88
1110
22
39
20
388
3.1
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Max.
0.44
40
Unit
oC/W
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDA20N50F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDA20N50 | 500V N-Channel MOSFET | Fairchild Semiconductor |
FDA20N50F | N-Channel MOSFET | Fairchild Semiconductor |
FDA20N50_F109 | N-Channel UniFET MOSFET | Fairchild Semiconductor |
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