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PDF K2960 Datasheet ( Hoja de datos )

Número de pieza K2960
Descripción Silicon N-Channel Power F-MOS FET
Fabricantes Panasonic 
Logotipo Panasonic Logotipo

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K2960 Hoja de datos, Descripción, Manual
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 55ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
400
±30
±10
±20
250
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
50
2
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 5mH, IL = 10A, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Turn-off time (delay time)
td(off)
Fall time
tf
VDS = 320V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
IDR = 10A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 5A
VDD = 100V, RL = 20
9.9±0.3
φ3.2±0.1
unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7 123
1: Gate
2: Drain
3: Source
TO-220E Package
min typ max Unit
0.1 mA
±1 µA
400 V
2 5V
0.4 0.52
35
S
1.5 V
1400
pF
290 pF
100 pF
25 ns
50 ns
170 ns
55 ns
1
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