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PDF P2N80 Data sheet ( Hoja de datos )
| Número de pieza | P2N80 | |
| Descripción | FQP2N80 | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP2N80
N-Channel QFET® MOSFET
800 V, 2.4 A, 6.3 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
November 2013
Features
• 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V,
ID = 1.2 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQP2N80
800
2.4
1.52
9.6
± 30
180
2.4
8.5
4.0
85
0.68
-55 to +150
300
FQP2N80
1.47
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQP2N80 Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Figure 12. Gate Charge Test Circuit & Waveform
Charge
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
Time
©2000 Fairchild Semiconductor Corporation
FQP2N80 Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P2N80.PDF ] | |
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