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PDF C3789 Data sheet ( Hoja de datos )
| Número de pieza | C3789 | |
| Descripción | NPN Transistor - 2SC3789 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C3789 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number:EN2093
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1479/2SC3789
High-Definiton CRT Display
Video Output Applications
Applications
· High-definition CRT display.
· Color TV chroma output, high breakdown voltage
drivers.
Package Dimensions
unit:mm
2042A
[2SA1479/2SC3789]
Features
· High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic
: Cre=1.8pF (typ).
· Adoption of MBIT process.
· No insulator required for mounting, which contrib-
utes to reducing the cost and the number of manufac-
turing processes.
· Plastic-covered heat sink facilitating high-density
mounting.
· Directly interchange able with TO-126 because the
package is designed based on the conventional
package dimensions.
B : Base
C : Collector
E : Emitter
SANYO : TO-126ML
( ) : 2SA1479
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.5
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
Ratings
min typ
40*
70
(–)300
(–)300
(–)5
2.6
(3.1)
1.8
(2.3)
max
(–)0.1
(–)0.1
320*
(–)0.6
(–)1.0
Unit
µA
µA
MHz
V
V
V
V
V
pF
pF
pF
pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4087TA, TS No.2093-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C3789.PDF ] | |
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