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Número de pieza | 50N03 | |
Descripción | Power Transistor | |
Fabricantes | Tuofeng | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 50N03 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
Type
50N03
50N03
2
Package
Marking
1
3
TO-252
50N03
12 3
TO-251
50N03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
ID
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Value
50
50
50
50
350
50
60
6
±20
30 V
5 mΩ
50 A
Unit
A
mJ
kV/µs
V
page 1
Free Datasheet http://www.datasheet4u.com/
1 page Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
150 15
3.2 V
10 V
120
5 V 4.5 V
90 4 V
60
30
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
150
12
3.5 V
9
3.5 V
6
10 V
3.2 V
3V
2.8 V
3
3
0
0 20 40 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4V
4.5 V
5V
11.5 V
80 100
150
120 120
90 90
60 60
30
175 °C
25 °C
0
012345
V GS [V]
page 5
30
0
0 20 40 60 80 100
I D [A]
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 50N03.PDF ] |
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