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PDF P2804ND5G Data sheet ( Hoja de datos )
| Número de pieza | P2804ND5G | |
| Descripción | N- & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
P2804ND5G
TO-252-5
Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 40 28m
P-Channel -40 55m
ID
7A
-5.5A
D1
G1
S1
D2
G2
S2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
40 -40 V
±20 ±20 V
7 -5.5
6 -4.5 A
50 -50
3
W
2.1
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
MAXIMUM
6
42
UNITS
°C / W
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 40
P-Ch -40
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
V
N-Ch
P-Ch
±100
nA
±100
1 Apr-18-2005
Free Datasheet http://www.datasheet4u.com/
1 page  
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
P2804ND5G
TO-252-5
Lead-Free
5 Apr-18-2005
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P2804ND5G.PDF ] | |
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