(PDF) MEM2309 Datasheet - P-Channel MOSFET

Número de pieza	MEM2309
Descripción	P-Channel MOSFET
Fabricantes	MicrOne
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No Preview Available ! MEM2309 P-Channel MOSFET MEM2309S Description MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Feature l -30V/-6A RDS(ON) =53mΩ@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A l High Density Cell Design For Ultra Low On-Resistance l Surface mount package:SOP8 Pin Configuration Typical Application: l Power management l Load switch l Battery protection Absolute Maximum Ratings: Parameter Drain-Source Voltage Gate-Source Voltage Drain TA=25 Current TA=70 Pulsed Drain Current1,2 Total Power TA=25 Dissipation TA=70 Operating Temperature Range Storage Temperature Range Symbol VDSS VGSS ID IDM Pd TOpr Tstg Ratings -30V ±20 -6 -3.2 -30 2 0.8 150 -65/150 Unit V V A A W V5.0 1 Free Datasheet http://www.datasheet4u.com/ 1 page Package Information MEM2309 V5.0 5 Free Datasheet http://www.datasheet4u.com/ 5 Page

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PDF MEM2309 Data sheet ( Hoja de datos )