|
|
PDF K4T51163QI Data sheet ( Hoja de datos )
| Número de pieza | K4T51163QI | |
| Descripción | 512Mb I-die DDR2 SDRAM | |
| Fabricantes | Samsung | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K4T51163QI (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
K4T51163QI
DDR2 SDRAM
512Mb I-die DDR2 SDRAM Specification
84FBGA with Halogen-Free & Lead-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 of 44
Rev. 1.0 July 2009
Free Datasheet http://www.datasheet4u.com/
1 page  
K4T51163QI
3.0 Package pinout/Mechanical Dimension & Addressing
DDR2 SDRAM
3.1 x16 Package Pinout (Top view) : 84ball FGGA Package
12 3
789
VDD
DQ14
VDDQ
DQ12
VDD
DQ6
VDDQ
DQ4
VDDL
NC
VSS
VDD
NC
VSSQ
DQ9
VSSQ
NC
VSSQ
DQ1
VSSQ
VREF
CKE
BA0
A10/AP
A3
A7
A12
VSS
UDM
VDDQ
DQ11
VSS
LDM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
VSSQ
UDQS
B
UDQS
VSSQ
C VDDQ DQ8
D
DQ10
VSSQ
E
VSSQ
LDQS
F
LDQS
VSSQ
G VDDQ DQ0
H
DQ2
VSSQ
J VSSDL CK
K RAS
CK
L CAS CS
M A2
A0
N A6
P A11
R NC
A4
A8
NC
VDDQ
DQ15
VDDQ
DQ13
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT
VDD
VSS
Note :
1. VDDL and VSSDL are power and ground for the DLL.
2. In case of only 8 DQs out of 16 DQs are used, LDQS, LDQSB and DQ0~7 must be used.
Ball Locations (x16)
: Populated Ball
+ : Depopulated Ball
Top View
(See the balls through the package)
123456789
A
B
C
D
E
F
G
H
J
K+
L
M+
N
P+
R
+++
+++
+++
+++
+++
+++
+++
+++
+++
+++
+++
+++
+++
+++
+++
+
+
+
5 of 44
Rev. 1.0 July 2009
Free
Data
5 Page 
K4T51163QI
DDR2 SDRAM
7.6 Differential input AC logic Level
Symbol
VID(AC)
VIX(AC)
Parameter
AC differential input voltage
AC differential cross point voltage
Note :
Min.
0.5
0.5 * VDDQ - 0.175
Max.
VDDQ
0.5 * VDDQ + 0.175
Units
V
V
Notes
1
2
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS)
and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC)
indicates the voltage at which differential input signals must cross.
3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
tude allowed for overshoot and undershoot.
VDDQ
VTR
VCP
VID
Crossing point
VIX or VOX
VSSQ
< Differential signal levels >
7.7 Differential AC output parameters
Symbol
Parameter
Min.
Max.
Units
Note
VOX(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1
Note :
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ .
VOX(AC) indicates the voltage at which differential output signals must cross.
8.0 ODT DC electrical characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to VDDQ/2
Note :
1. Test condition for Rtt measurements
SYMBOL
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
delta VM
MIN NOM MAX UNITS NOTES
60 75 90 ohm
1
120 150 180 ohm
1
40 50 60 ohm
1
-6
+6 %
1
Measurement Definition for Rtt(eff) : Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL (ac)) respectively.
VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Rtt(eff) = VIH (ac) - VIL (ac)
I(VIH (ac)) - I(VIL (ac))
delta VM =
2 x Vm
-1
VDDQ
x 100%
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
11 of 44
Rev. 1.0 July 2009
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet K4T51163QI.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K4T51163QB | 512Mb B-die DDR2 SDRAM | Samsung |
| K4T51163QB-GCD5 | 512Mb B-die DDR2 SDRAM |  Samsung semiconductor |
| K4T51163QB-ZCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
| K4T51163QE | 512Mb E-die DDR2 SDRAM Specification | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |