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Número de pieza | GT30J122A | |
Descripción | Silicon N-Channel IGBT | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT30J122A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications
• Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 4th generation
(2) Enhancement mode
(3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A)
(4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)
3. Packaging and Internal Circuit
GT30J122A
TO-3P(N)
1 : Gate
2 : Collector
3 : Emitter
1 2012-06-25
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
1 page GT30J122A
Fig. 8.7 Switching Time - RG
Fig. 8.8 Switching Time - IC
Fig. 8.9 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.10 Reverse Bias SOA
(Guaranteed Maximum)
Fig. 8.11 rth(j-c) - tw
(Guaranteed Maximum)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test.
5 2012-06-25
Rev.1.0
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet GT30J122A.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING | Toshiba Semiconductor |
GT30J122A | Silicon N-Channel IGBT | Toshiba |
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