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PDF 2SB772 Data sheet ( Hoja de datos )
| Número de pieza | 2SB772 | |
| Descripción | Plastic Encapsulate Transistors | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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 1. PNP Silicon Transistor - UTC  Hay una vista previa y un enlace de descarga de 2SB772 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Elektronische Bauelemente
2SB772
PNP Type
Plastic Encapsulate Transistors
Features
* Power Dissipation:
PCM: 625 mW (Tamb=25oC)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
MAXIMUM RATINGS* TA=25oC unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current –Continuous
-3 A
PC Collector Dissipation
TJ Junction Temperature
Tstg Storage Temperature
0.625
150
-55~150
W
oC
oC
0.4 6+–00..11
0.43+–00..0078
(1.27 Typ).
123
1.25+–00..22
2.54±0.1
1: Emitter
2: Collector
3: Base
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE（1）
hFE（2）
VCE(sat)
Ic=-100μA ，IE=0
IC= -10 mA , IB=0
IE= -100 μA，IC=0
VCB= -40 V , IE=0
VCE=-30 V , IB=0
VEB=-6V , IC=0
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB= -0.2A
-40
-30
-6
60
32
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
Transition frequency
fT
VCE= -5V, IC=-0.1A
f = 10MHz
50
MAX
-1
-10
-1
400
-0.5
-1.5
UNIT
V
V
V
μA
μA
μA
V
V
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2005 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB772.PDF ] | |
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