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PDF P5N50C Data sheet ( Hoja de datos )

Número de pieza P5N50C
Descripción 5 Ampere 500 Volt N-Channel MOSFET
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! P5N50C Hoja de datos, Descripción, Manual

P5N50C
®
P5N50C
Pb
Pb Free Plating Product
5 Ampere 500 Volt N-Channel MOSFET
Features
̰ RDS(on) (Max 1.5 ˟ )@VGS=10V
̰ Gate Charge (Typical 18.5nC)
̰ Improved dv/dt Capability
̰ High ruggedness
̰ 100% Avalanche Tested
1. Gate {
{ 2. Drain
̻
ඔ̵
̻
̻
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using Thinki Semiconductor's advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220 package is well suited for
half bridge and full bridge resonant topolgy like a electronic
ballast .
BVDSS = 500V
RDS(ON) = 1.5 ohm
ID = 5.0A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RTJC
RTCS
RTJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
5.0
3.4
21.2
±30
390
9.84
4.5
98.4
0.78
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.27
-
62
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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P5N50C pdf
P5N50C
®
Fig. 12. Gate Charge Test Circuit & Waveforms
50K ש
Same as
DUT
12V 200nF
300nF
V GS
10V
Qg
VDS Qgs Qgd
VGS
DUT
1mA
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDSS
10V
Pulse
Generator
RG
RL
VDS
90%
VDD
( O.5 rated VDD )
DUT
Vin 10%
td(on)
tr
t(on)
td(off) tf
t(off)
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
10V RG
L
DUT
BVDSS
IAS
Eas = 1 LIAS 2
2
BVDSS
BVDSS -VDD
ID (t)
tp
VDS (t)
© 2006 Thinki Semiconductor Co.,Ltd.
Page 5/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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