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PDF P55NF06 Datasheet ( Hoja de datos )

Número de pieza P55NF06
Descripción N-CHANNEL POWER MOSFET TRANSISTOR
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo

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P55NF06 Hoja de datos, Descripción, Manual
55NF06
®
55NF06
Pb
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
„ DESCRIPTION
Thinkisemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
„ FEATURES
* RDS(ON) = 23mȍ@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
„ SYMBOL
U55NF06 TO-251/IPAK
P55NF06 TO-220
F55NF06 TO-220F
D55NF06 TO-252/DPAK
„ APPLICATION
Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..
12 3
TO-251/IPAK
12 3 TO-220/TO-220F
1 2 3 TO-252/DPAK
1.Gate
2.Drain
„ ABSOLUTE MAXIMUM RATINGS
3.Source
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
VGSS
±20 V
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
50 A
35 A
Pulsed Drain Current (Note 2)
IDM 200 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
480 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7 V/ns
TO-220
120 W
Power Dissipation (TC=25°C)
TO-251
PD
90 W
TO-252
136 W
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20ȍ, Starting TJ=25°C
4. ISD”50A, di/dt”300A/ȝs, VDD”BVDSS, Starting TJ=25°C
Page 1/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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P55NF06 pdf
55NF06
„ TYPICAL CHARACTERISTICS
®
On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0



On State Current vs.
Allowable Case Temperature
102
1.5
1.0 VGS=10V
0.5 VGS=20V
0.0
0 20 40 60 80 100 120140160180 200
Drain Current, ID (A)


150°C
101
25°C
100
0.2
*Note:
1. VGS=0V
2. 250μs Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)

© 2006 Thinki Semiconductor Co.,Ltd.

Page 5/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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