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PDF MUR810G Data sheet ( Hoja de datos )

Número de pieza MUR810G
Descripción (MUR805G - MUR860G) Power Rectifiers
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! MUR810G Hoja de datos, Descripción, Manual

MUR805G, MUR810G,
MUR815G, MUR820G,
MUR840G, MUR860G,
MURF860G, SUR8820G,
SUR8840G
SWITCHMODE
Power Rectifiers
This series are stateoftheart devices designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 25 and 50 Nanosecond Recovery Time
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
Reverse Voltage to 600 V
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
All Packages are PbFree*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
http://onsemi.com
ULTRAFAST RECTIFIERS
8.0 AMPERES, 50600 VOLTS
1
4
3
TO220AC
CASE 221B
PLASTIC
TO220 FULLPAK
CASE 221E
STYLE 1
MARKING DIAGRAMS
AY WWG
U8xx
KA
AYWWG
MURF860
KA
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 11
1
A
Y
WW
U8XX
G
KA
= Assembly Location
= Year
= Work Week
= Device Code
xx = 05, 10, 15, 20, 40, or 60
= PbFree Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
MUR820/D
Free Datasheet http://www.datasheet4u.com/

1 page




MUR810G pdf
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR860G, MURF860G
100 1000
100°C
TJ = 150°C
100
10 25°C
10
1.0
1
0.1
TJ = 150°C
100°C
25°C
0.1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 11. Typical Forward Voltage
1.8
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
140
dc
SQUARE WAVE
RATED VR APPLIED
150 160 170
TC, CASE TEMPERATURE (°C)
Figure 13. Current Derating, Case
180
0.01
100
200 300 400 500
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Typical Reverse Current*
600
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
10
9.0 dc
8.0
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
7.0
6.0
SQUARE WAVE
5.0
4.0
dc
3.0
2.0 SQUARE WAVE
1.0
0
0 20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (°C)
Figure 14. Current Derating, Ambient
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
SQUARE
WAVE
dc
TJ = 175°C
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 15. Power Dissipation
10
10,000
1,000
100
10
100
1,000
10,000
tp, SQUARE WAVE PULSE DURATION (ms)
Figure 16. Typical NonRepetitive Surge
Current
* Typical performance based on a limited sample size. ON Semiconductor
does not guarantee ratings not listed in the Maximum Ratings table.
http://onsemi.com
5
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