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PDF MUR3040CT Datasheet ( Hoja de datos )

Número de pieza MUR3040CT
Descripción (MUR3020CT / MUR3040CT) SUPER FAST RECOVERY RECTIFIER
Fabricantes GOOD ELECTRONIC 
Logotipo GOOD ELECTRONIC Logotipo

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MUR3040CT Hoja de datos, Descripción, Manual
MUR3020CT THRU MUR3040CT
0.419(10.66)MAX.
SUPER FAST RECOVERY RECTIFIER
Reverse Voltage - 200 and 400 Volts Forward Current - 30.0 Ampere
TO-220AB
FEATURES
Ø 0.139(3.55)
MIN
0.054(1.39)
0.045(1.15)
0.196(5.0)
0.163(4.16)
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
Flame Retardant Epoxy Molding Compound.
Exceeds environmental of MIL-S-19500/228
Low power loss, high efficiency.
Low forward voltage, high current capability.
High surge capability.
Super fast recovery times, high voltage.
Epitaxial chip construction.
In compliance with EU RoHS 2002/95/EC directives.
Pin 1
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.1(2.54)
Typ.
0.115(2.92)
0.080(2.03)
AC 1
0.025(0.65)
MAX
Dimensions in inches and (millimeters)
AC 3
MECHANICAL DATA
Case: TO-220AB, Molded plastic.
Terminals: Solderable per MIL-STD-750Method 2026
Weight: 1.859 gram (0.0655 ounces).
Standard Packaging : Tube.
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwis e specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum Recurrenent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Breakdown Voltage
Maximum Average Forward Current at TC =90°C
Peak Forward Surge Current, 8.3ms single half sinewave superimposed on rated
olad(JEDEC methode)
Maximum Forward Voltage at 15A
Maximum DC Reverse Current
Rated DC Blocking Voltage
TJ=25°C
at TJ=125°C
Maximum Reverse Recovery Time (NOTE 2)
Typical Junction Capacitance (NOTE 1)
Typical Thermal Resistance
Operating and Storage Temperature Range
SYMBOLS
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
trr
CJ
Rθ JC
TSTG
MUR3020CT
MUR3040CT
200 400
140 280
200 400
30
300
0.95
1
50
35
1.3
140
2
-55 +150
UNITS
Volts
Volts
Volts
Amp
Amps
Volts
µA
ns
pF
°C/W
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
3. Both Bonding and Chip structure are availiable.
GOOD ELECTRONIC CO., LTD
Free Datasheet http://www.datasheet4u.com/

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