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PDF MBR1045CT Data sheet ( Hoja de datos )

Número de pieza MBR1045CT
Descripción (MBR1020CT - MBR10100CT) 10 AMPERES SCHOTTKY BARRIER RECTIFIERS
Fabricantes Pan Jit 
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No Preview Available ! MBR1045CT Hoja de datos, Descripción, Manual

MBR1020CT~MBR10100CT
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
MECHANICALDATA
Case: TO-220AB molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.025(0.65)MAX
.1(2.54)
Positive CT
AC
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL MBR1020CT MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT MBR1080CT MBR10100CT UNITS
VRRM 20 30 40 45 50 60 80 100 V
Maximum RMS Voltage
VRMS 14 21 28 31.5 35 42 56 70 V
Maximum DC Blocking Voltage
VDC 20 30 40 45 50 60 80 100 V
Maximum Average Forward Current (See fig.1)
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 5A, per leg
IAV
IFSM
VF
Maximum DC Reverse Current Tc=25 OC
at Rated DC Blocking Voltage Tc=125OC
IR
Typical Thermal Resistance
RθJC
10 A
150 A
0.65 0.75 0.8 V
0.1
20
mA
2 OC / W
Operating Junction Temperature Range
TJ
-50 TO + 150
OC
Storage Temperature Range
TSTG
-50 TO + 175
OC
Notes :
Both Bonding and Chip structure are available.
REV.0-MAR.30.2005
PAGE . 1
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