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PDF MBR1050CT Data sheet ( Hoja de datos )

Número de pieza MBR1050CT
Descripción (MBR1030CT - MBR1060CT) Schottky Barrier Recitifier
Fabricantes Silicon Standard 
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MBR1030CT-MBR1060CT
Schottky Barrier Recitifier
PRODUCT SUMMARY
TO-220 Plastic-Encapsulate Transistors
FEATURES
Scottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Very low forward voltage drop
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For use in low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
TO-220
1. ANODE
2. CATHODE
3. ANODE
123
Pb-free; RoHS-compliant
ELECTRICAL CHARACTERISTICS
( Tamb = 25oC unless otherwise specified )
1
2
3
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
PMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC=105
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
@ t2.0µs
Forward Voltage Drop
@ IF=5.0A, TC=125
@ IF=5.0A, TC= 25
@ IF=10A, TC= 25
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC= 25
@ TC=125
Typical Junction Capacitance (Note 2)
Symbol
VRRM
VRWM
VR
MBR MBR MBR MBR MBR MBR
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
30 35 40
45 50 60
Unit
V
VR(RMS)
21
24.5 28
31.5 35
42
V
IO 10 A
IFSM 125 A
IRRM
1.0 A
0.57 0.70
VFM 0.70
0.84
0.80 V
0.95
0.1
IRM
mA
15
Cj 150 pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
01/29/2007 Rev.1.00
www.SiliconStandard.com
1
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