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PDF URF1630D Data sheet ( Hoja de datos )

Número de pieza URF1630D
Descripción (URF1605 - URF1660) 16.0 Amp.Isolated Glass Passivated Junction Ultrafast Recovery Rectifiers
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! URF1630D Hoja de datos, Descripción, Manual

URF1605 thru URF1660
®
URF1605 thru URF1660
Pb Free Plating Product
Pb
16.0 Amp.Isolated Glass Passivated Junction Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.03 grams
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Positive
Suffix "C"
Negative
Suffix "A"
Doubler/Series Connection
Suffix "D"
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "C"
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
URF1605C
SYMBOL URF1605A
URF1605D
VRRM
50
VRMS
35
VDC 50
URF1610C
URF1610A
URF1610D
URF1620C
URF1620A
URF1620D
URF1630C
URF1630A
URF1630D
100 200 300
70 140 210
100 200 300
URF1640C
URF1640A
URF1640D
URF1660C
URF1660A UNIT
URF1660D
400 600 V
280 420 V
400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98 1.3
10.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
A
1.7 V
uA
uA
nS
pF
oCW
oC
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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